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savantic semiconductor product specification silicon npn power transistors BDX36 d escription with to-126 package high current (max: 5a) applications high current switching in power applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 60 v v ebo emitter -base voltage open collector 5 v i c collector current (dc) 5 a i cm collector current-peak 10 a i bm base current-peak 2 a p t total power dissipation t mb 0 75 15 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-a thermal resistance from junction to ambient 100 k/w r th j-mb thermal resistance from junction to mounting base 5 k/w
savantic semiconductor product specification 2 silicon npn power transistors BDX36 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat-1 collector-emitter saturation voltage i c =5a; i b =0.5a 0.9 v v cesat-2 collector-emitter saturation voltage i c =10a; i b =1a 2.0 v v besat-1 base-emitter saturation voltage i c =5a; i b =0.5a 1.7 v v besat-2 base-emitter saturation voltage i c =10a; i b =1a 2.5 v i cbo collector cut-off current v cb =100v; i e =0 t j =100 0.1 10 a i ebo emitter cut-off current v eb =5v; i c =0 0.1 a h fe dc current gain i c =0.5a ; v ce =10v 45 450 c c collector capacitance i e =0;v cb =10v ;f=1mhz 40 pf f t transition frequency i c =0.5a; v ce =5v ;f=100mhz 100 mhz switching times i c on =1a;i b on =-i b off =0.1a 60 100 i c on =2a;i b on =-i b off =0.2a 80 t on turn-on time i c on =5a;i b on =-i b off =0.5a 180 300 ns i c on =1a;i b on =-i b off =0.1a 600 800 i c on =2a;i b on =-i b off =0.2a 450 700 t off turn-off time i c on =5a;i b on =-i b off =0.5a 350 500 ns savantic semiconductor product specification 3 silicon npn power transistors BDX36 package outline fig.2 outline dimensions |
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